Semiconductor optical modulator having a quantum well structure for increasing effective photocurrent generating capability
文献类型：专利
| 作者 | BOUR, DAVID P.; ZHU, JINTIAN |
| 发表日期 | 2007-02-13 |
| 专利号 | US7177061 |
| 著作权人 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor optical modulator having a quantum well structure for increasing effective photocurrent generating capability |
| 英文摘要 | An optical modulator comprises a first waveguide layer and a barrier layer, and a quantum well layer sandwiched between the first waveguide layer and the barrier layer, where the quantum well layer has a graded composition that varies the bandgap energy of the quantum well layer between a minimum bandgap energy and the bandgap energy of at least one of the first waveguide layer and the barrier layer. |
| 公开日期 | 2007-02-13 |
| 申请日期 | 2005-05-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45642]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. |
| 推荐引用方式 GB/T 7714 | BOUR, DAVID P.,ZHU, JINTIAN. Semiconductor optical modulator having a quantum well structure for increasing effective photocurrent generating capability. US7177061. 2007-02-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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