Application-oriented nitride substrates for epitaxial growth of electronic and optoelectronic device structures
文献类型：专利
| 作者 | SHARMA, TARUN KUMAR; TOWE, ELIAS |
| 发表日期 | 2014-04-15 |
| 专利号 | US8699537 |
| 著作权人 | SHARMA, TARUN KUMAR |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Application-oriented nitride substrates for epitaxial growth of electronic and optoelectronic device structures |
| 英文摘要 | The present invention provides an applications-oriented nitride compound semiconductor substrate, and devices based on it, whose lattice constant can be tuned to closely match that of any nitride thin film or films deposited on it for specific electronic or optoelectronic device applications. Such application-oriented nitride substrates, which can be composed of ternary InxGa1-xN, AlyIn1-yN, AlzGa1-zN, or quaternary AlaInbGa1-a-bN alloy compounds, minimize lattice-mismatch-induced dislocations and defects between the epitaxial films and the substrate on which the device layers are grown, leading to substantially improved device performance. |
| 公开日期 | 2014-04-15 |
| 申请日期 | 2010-10-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45644]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARMA, TARUN KUMAR |
| 推荐引用方式 GB/T 7714 | SHARMA, TARUN KUMAR,TOWE, ELIAS. Application-oriented nitride substrates for epitaxial growth of electronic and optoelectronic device structures. US8699537. 2014-04-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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