Semiconductor device and its fabrication method
文献类型：专利
| 作者 | MOCHIZUKI, KAZUHIRO; MISHIMA, TOMOYOSHI; NAKAMURA, TOHRU; MASUDA, HIROSHI; TANOUE, TOMONORI; HAGA, TOORU; FUJISAKI, YOSHIHISA |
| 发表日期 | 1996-01-02 |
| 专利号 | US5481120 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device and its fabrication method |
| 英文摘要 | Disclosed is a semiconductor device using a polycrystalline compound semiconductor with a low resistance as a low resistance layer, and its fabrication method. The above polycrystalline compound semiconductor layer is doped with C or Be as impurities in a large amount, and is extremely low in resistance. The polycrystalline compound semiconductor layer is formed by either of a molecular beam epitaxy method, an organometallic vapor phase epitaxy method and an organometallic molecular beam epitaxy method under the condition that a substrate temperature is 450 DEG C. or less and the ratio of partial pressure of a V-group element to a III-group element is 50 or more. In the case that the above polycrystaline compound semiconductor layer with a low resistance is used as an extrinsic base region of an heterojunction bipolar transistor, since the extrinsic base region can be formed on a dielectric film formed on a collector, it is possible to reduce the base-collector capacitance, and hence to enhance the operational speed of the heterojunction bipolar transistor. |
| 公开日期 | 1996-01-02 |
| 申请日期 | 1993-12-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45648]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | MOCHIZUKI, KAZUHIRO,MISHIMA, TOMOYOSHI,NAKAMURA, TOHRU,et al. Semiconductor device and its fabrication method. US5481120. 1996-01-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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