Buried hetero-structure laser diode
文献类型：专利
| 作者 | WILSON, RANDALL B. |
| 发表日期 | 1988-03-15 |
| 专利号 | US4731791 |
| 著作权人 | AMP INCORPORATED A CORPORATION OF PA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Buried hetero-structure laser diode |
| 英文摘要 | A buried hetero-structure laser diode is disclosed. The buried hetero-structure is formed by growing a double hetero-structure on a substrate. The double hetero-structure comprises two cladding layers spaced apart by a narrow bandgap active layer. Two spaced apart channels are etched in the double hetero-structure down to the lower cladding layer to define a mesa therebetween. Current blocking layers are deposited in the channels and on the portions of the double hetero-structure located outside the channels. The liquid phase epitaxy growth conditions are such that while the blocking layers are deposited in the channels and outside the channels, the upper cladding layer portion of the mesa is being melted back. Thus, the ends of the blocking layers touching the melted back mesa are separated from the active layer portion of the mesa by a thickness substantially less than the thickness of the upper cladding layer as measured in the regions outside the channels. |
| 公开日期 | 1988-03-15 |
| 申请日期 | 1986-05-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45661]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AMP INCORPORATED A CORPORATION OF PA |
| 推荐引用方式 GB/T 7714 | WILSON, RANDALL B.. Buried hetero-structure laser diode. US4731791. 1988-03-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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