Nitride-based semiconductor laser device and method of manufacturing the same
文献类型：专利
| 作者 | MIYAKE, YASUTO; HIROYAMA, RYOJI; HATA, MASAYUKI; KUNO, YASUMITSU |
| 发表日期 | 2011-02-08 |
| 专利号 | US7885304 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride-based semiconductor laser device and method of manufacturing the same |
| 英文摘要 | A nitride-based semiconductor laser device includes a nitride-based semiconductor layer formed on a main surface of a substrate and having an emission layer, wherein the nitride-based semiconductor layer includes a first side surface formed by a (000-1) plane and a second side surface inclined with respect to the first side surface, and a ridge having an optical waveguide extending perpendicular to a [0001] direction in an in-plane direction of the main surface of the substrate is formed by a region held between the first side surface and the second side surface. |
| 公开日期 | 2011-02-08 |
| 申请日期 | 2009-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45664]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | MIYAKE, YASUTO,HIROYAMA, RYOJI,HATA, MASAYUKI,et al. Nitride-based semiconductor laser device and method of manufacturing the same. US7885304. 2011-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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