Epitaxial growth process for the production of a window semiconductor laser
文献类型：专利
| 作者 | MORIMOTO, TAIJI; MAEI, SHIGEKI; HAYASHI, HIROSHI; YAMAMOTO, SABURO |
| 发表日期 | 1992-02-11 |
| 专利号 | US5087587 |
| 著作权人 | SHARP KABUSHIKI KAISHA, 22-22, NAGAIKE-CHO, ABENO-KU, OSAKA 545 JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Epitaxial growth process for the production of a window semiconductor laser |
| 英文摘要 | A window semiconductor laser device comprising a stripe-channeled substrate, an active layer for laser oscillation and a cladding layer disposed under the active layer, wherein the surface of the active layer is flat and the thickness of the portion of the active layer corresponding to the striped channel of said substrate in each of the window regions in the vicinity of the facets is thinner than that of the portion of the active corresponding to the striped channel of said substrate in the stimulated region positioned between the window regions. |
| 公开日期 | 1992-02-11 |
| 申请日期 | 1987-02-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45666]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA, 22-22, NAGAIKE-CHO, ABENO-KU, OSAKA 545 JAPAN |
| 推荐引用方式 GB/T 7714 | MORIMOTO, TAIJI,MAEI, SHIGEKI,HAYASHI, HIROSHI,et al. Epitaxial growth process for the production of a window semiconductor laser. US5087587. 1992-02-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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