Nitride semiconductor light emitting device and method for manufacturing the same
文献类型：专利
| 作者 | TERANO, AKIHISA; TSUCHIYA, TOMONOBU |
| 发表日期 | 2010-10-26 |
| 专利号 | US7822088 |
| 著作权人 | USHIO OPTO SEMICONDUCTORS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor light emitting device and method for manufacturing the same |
| 英文摘要 | A nitride semiconductor light emitting device operating on a low voltage and excelling in reliability and performance is to be provided. It has a multi-layered p-type clad layer of at least two layers of a first p-type clad layer and a second p-type clad layer, wherein the second p-type clad layer contains a p-type impurity in a higher concentration the first p-type clad layer does, has a thickness ranging from 2 to 20 nm, and is formed of AlYGa1-YN whose Al content has a relationship of X≦Y to the first p-type clad layer doped with a p-type impurity containing at least an AlXGa1-XN (0 |
| 公开日期 | 2010-10-26 |
| 申请日期 | 2008-07-11 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45679]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | USHIO OPTO SEMICONDUCTORS, INC. |
| 推荐引用方式 GB/T 7714 | TERANO, AKIHISA,TSUCHIYA, TOMONOBU. Nitride semiconductor light emitting device and method for manufacturing the same. US7822088. 2010-10-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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