Semiconductor laser device in which compressive strain active layer is sandwiched between tensile strain optical waveguide layers and average strain is limited
文献类型：专利
| 作者 | FUKUNAGA, TOSHIAKI |
| 发表日期 | 2003-11-04 |
| 专利号 | US6643306 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device in which compressive strain active layer is sandwiched between tensile strain optical waveguide layers and average strain is limited |
| 英文摘要 | In a semiconductor laser device having a substrate and an active region, the active region includes an active layer between tensile strain optical waveguide layers. The active layer includes at least one compressive strain quantum well sublayer. When the active layer includes more than one compressive strain quantum well sublayer, the active layer further includes at least one barrier sublayer being formed between the more than one quantum well sublayer and having an identical amount of tensile strain to that of the optical waveguide layers. The absolute value of a sum of a product of the strain and the total thickness of the at least one quantum well sublayer and a product of the strain and the total thickness of the optical waveguide layers and the at least one barrier sublayer (if any) is equal to or smaller than 0.05 nm. |
| 公开日期 | 2003-11-04 |
| 申请日期 | 2001-10-31 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45680]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | FUKUNAGA, TOSHIAKI. Semiconductor laser device in which compressive strain active layer is sandwiched between tensile strain optical waveguide layers and average strain is limited. US6643306. 2003-11-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。