Semiconductor laser structure with an increased catastrophic optical damage level
文献类型：专利
| 作者 | YU, YUAN-CHEN; CHIU, CHIEN-CHIA; HO, JIN-KUO |
| 发表日期 | 2002-04-16 |
| 专利号 | US6373875 |
| 著作权人 | INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser structure with an increased catastrophic optical damage level |
| 英文摘要 | A semiconductor laser structure is provided, which has an increased catastrophic optical damage (COD) level that allows the laser diode to have an increased life time of use. This semiconductor laser structure is characterized in the forming of a current-blocking structure proximate to the facets of the laser diode, which can help reduce the injected current into the facets, thereby increasing the COD level of the resulted laser diode. As a result, the resulted laser diode can operate at a high output power and nonetheless have an increased life time of use. Moreover, the forming of the current-blocking layers proximate to the facets can be performed simply by incorporating an additional photomask step in the fabrication without having equipment such as epitaxial equipment or vacuum equipment in the case of the prior art. |
| 公开日期 | 2002-04-16 |
| 申请日期 | 1999-08-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45681]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | YU, YUAN-CHEN,CHIU, CHIEN-CHIA,HO, JIN-KUO. Semiconductor laser structure with an increased catastrophic optical damage level. US6373875. 2002-04-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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