半導体レーザ装置又は光導波路およびその製造方法
文献类型：专利
| 作者 | 大塚 信之; 石野 正人; 松井 康 |
| 发表日期 | 1999-08-27 |
| 专利号 | JP2969939B2 |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置又は光導波路およびその製造方法 |
| 英文摘要 | PURPOSE:To realize a semiconductor laser having a low threshold value necessary for an optical fiber communication, etc., or an optical waveguide having large optical amplification by providing the laser or the waveguide having a strain well layer in which inactive or optical amplification impurity is added. CONSTITUTION:A current introduced from a p-type side electrode 11 is narrowed by a current block layer 8, then concentrated at an active layer region 9, and injected to a distortion quantum well 5. The well 5 is formed in a 3-layer structure of a barrier layer 3 and a well layer 4, and carbon atoms are added to the layer 4. An Auger effect is suppressed by a strain effect in the well to reduce a threshold current. After a light emitting element, an optical switch, a photodetector, etc., are monolithically integrated on an InP board 11, and a distortion quantum well optical waveguide having high optical amplification is formed to optically wire between the devices. A propagation mode can be regulated to an optimum value, and an optical amplification is provided. |
| 公开日期 | 1999-11-02 |
| 申请日期 | 1990-11-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45687]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | 大塚 信之,石野 正人,松井 康. 半導体レーザ装置又は光導波路およびその製造方法. JP2969939B2. 1999-08-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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