Polyimide/silicon oxide bi-layer for bond pad parasitic capacitance control in semiconductor electro-optical device
文献类型：专利
| 作者 | QIAN, YI; LU, HANH; SAHARA, RICHARD |
| 发表日期 | 2002-04-02 |
| 专利号 | US6365968 |
| 著作权人 | THORLABS QUANTUM ELECTRONICS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Polyimide/silicon oxide bi-layer for bond pad parasitic capacitance control in semiconductor electro-optical device |
| 英文摘要 | An electro-optical, ridge-waveguide device and method for its fabrication utilizes a polyimide ridge-protection layer, which provides good ridge protection/planarization while minimizing parasitic capacitance. A silicon oxide interlayer is used between a metal contact layer and the polyimide. This interlayer facilitates the adhesion between the metal contact layer and the underlying device since good adhesion can be obtained between the silicon oxide layer and the polyimide layer and between the metal layer and silicon oxide layer. Preferably, the polyimide is roughened to increase the surface area contact between the polyimide layer and silicon oxide layer to further increase adhesion and thus the pull-off force required to separate the metal contact layer from the device. While such roughening can be achieved through plasma etching, in a preferred embodiment, the polyimide layer is roughened by patterned etching. Specifically, a patterned photoresist is used as a etch-protection layer to form a series of wells in the polyimide layer that have a pitch between 1 and 20 microns. |
| 公开日期 | 2002-04-02 |
| 申请日期 | 1998-08-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45690]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THORLABS QUANTUM ELECTRONICS, INC. |
| 推荐引用方式 GB/T 7714 | QIAN, YI,LU, HANH,SAHARA, RICHARD. Polyimide/silicon oxide bi-layer for bond pad parasitic capacitance control in semiconductor electro-optical device. US6365968. 2002-04-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。