Method for the production of a semiconductor laser having several independent wavelengths
文献类型：专利
| 作者 | BOUADMA NOUREDDINE |
| 发表日期 | 1989-07-06 |
| 专利号 | DE3380011D1 |
| 著作权人 | BOUADMA NOUREDDINE |
| 国家 | 德国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for the production of a semiconductor laser having several independent wavelengths |
| 英文摘要 | Process for producing a laser having several wavelengths, wherein: a first double heterostructure is produced by epitaxy with an active layer having a first composition, the first double heterostructure obtained is etched into the substrate, through a mask having openings in the form of strips, which leads to a substrate on which there are strips of the first double heterostructure separated by etched portions, a second double heterostructure with an active layer having a second composition is grown in the etched portions, a groove is formed between the first and second heterostructures down to the contact layer, and the groove undergoes proton bombardment. The invention also relates to the laser obtained by this process. Application to optical telecommunications. |
| 公开日期 | 1989-07-06 |
| 申请日期 | 1983-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45692]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BOUADMA NOUREDDINE |
| 推荐引用方式 GB/T 7714 | BOUADMA NOUREDDINE. Method for the production of a semiconductor laser having several independent wavelengths. DE3380011D1. 1989-07-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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