Semiconductor Laser
文献类型：专利
| 作者 | MATSUMOTO,KENJI C/O PATENT DIVISION, K.K. TOSHIBA; KURIHARA, HARUKI C/O PATENT DIVISION, K.K. TOSHIBA |
| 发表日期 | 1993-03-17 |
| 专利号 | EP0291936B1 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor Laser |
| 英文摘要 | In a semiconductor laser, a substrate (15) is composed of a semiconductor basement (20) and a semiconductor current-blocking layer (21) on the basement. A straight channel (90) is grooved into the current-blocking-layer to reach the basement. The straight channel (90) has a constant width and is composed of a shallow window-region-channels (95A, 95B) in the vicinity of the cavity mirrors and a deep gain-region-channel (96) in the middle of the laser cavity. A first cladding layer (25) is grown on the substrate (15). A semiconductor active layer (26) is grown on the first cladding layer (25). A second cladding layer (27) is grown on the active layer (26). A semiconductor ohmic contact layer (28) is grown on the second cladding layer (27). A pair of electrodes (29, 30) is deposited on each of the upper and lower surfaces of the semiconductor laser device. A pair of cleaved facets (32A, 32B) is faced toward the direction perpendicular to the channel. |
| 公开日期 | 1993-03-17 |
| 申请日期 | 1988-05-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45694]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | MATSUMOTO,KENJI C/O PATENT DIVISION, K.K. TOSHIBA,KURIHARA, HARUKI C/O PATENT DIVISION, K.K. TOSHIBA. Semiconductor Laser. EP0291936B1. 1993-03-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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