Optical semiconductor device including InGaAlAs doped with Zn
文献类型：专利
| 作者 | TSUCHIYA, TOMONOBU |
| 发表日期 | 2005-02-08 |
| 专利号 | US6853015 |
| 著作权人 | LUMENTUM JAPAN, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical semiconductor device including InGaAlAs doped with Zn |
| 英文摘要 | A modulation doped multiple quantum well structure having a steep Zn profile of several nm by the balance between an increase in a Zn concentration and a decrease in Zn diffusion by using metal organic vapor phase epitaxy using Zn, in which an InGaAlAs quaternary alloy is used and the Zn concentration and the range for crystal composition are defined to equal to or less than the critical concentration at which Zn diffuses abruptly in each of InGaAlAs compositions. |
| 公开日期 | 2005-02-08 |
| 申请日期 | 2002-06-19 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45699]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMENTUM JAPAN, INC. |
| 推荐引用方式 GB/T 7714 | TSUCHIYA, TOMONOBU. Optical semiconductor device including InGaAlAs doped with Zn. US6853015. 2005-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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