中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser and method of producing the same

文献类型:专利

作者MURAYAMA, MINORU
发表日期2004-01-27
专利号US6683899
著作权人ROHM CO., LTD.
国家美国
文献子类授权发明
其他题名Semiconductor laser and method of producing the same
英文摘要A semiconductor laser having a lower clad layer, an active layer, a first upper clad layer and a dry-etching stop layer, all the layers being successively laminated on a compound semiconductor substrate. The semiconductor laser further includes (i) a second upper clad layer, in the form of a ridge, formed above the first upper clad layer, (ii) an etching stop layer present only between the dry-etching stop layer and the second upper clad layer, and (iii) block layers formed at sides of the second upper clad layer.
公开日期2004-01-27
申请日期2001-12-19
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/45705]  
专题半导体激光器专利数据库
作者单位ROHM CO., LTD.
推荐引用方式
GB/T 7714
MURAYAMA, MINORU. Semiconductor laser and method of producing the same. US6683899. 2004-01-27.

入库方式: OAI收割

来源:西安光学精密机械研究所

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