Semiconductor laser and method of producing the same
文献类型:专利
作者 | MURAYAMA, MINORU |
发表日期 | 2004-01-27 |
专利号 | US6683899 |
著作权人 | ROHM CO., LTD. |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor laser and method of producing the same |
英文摘要 | A semiconductor laser having a lower clad layer, an active layer, a first upper clad layer and a dry-etching stop layer, all the layers being successively laminated on a compound semiconductor substrate. The semiconductor laser further includes (i) a second upper clad layer, in the form of a ridge, formed above the first upper clad layer, (ii) an etching stop layer present only between the dry-etching stop layer and the second upper clad layer, and (iii) block layers formed at sides of the second upper clad layer. |
公开日期 | 2004-01-27 |
申请日期 | 2001-12-19 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/45705] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | ROHM CO., LTD. |
推荐引用方式 GB/T 7714 | MURAYAMA, MINORU. Semiconductor laser and method of producing the same. US6683899. 2004-01-27. |
入库方式: OAI收割
来源:西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。