Method for producing semiconductor light emitting device
文献类型：专利
| 作者 | ISSHIKI, KUNIHIKO |
| 发表日期 | 1992-09-22 |
| 专利号 | US5149670 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for producing semiconductor light emitting device |
| 英文摘要 | A method of producing a semiconductor light emitting device includes forming a stripe-shaped mesa on a surface of a semiconductor substrate; epitaxially growing a multiple layer structure including at least a first cladding layer, an active layer, a second cladding layer, and a cap layer so that the active layer and cap layer have mesas corresponding to the mesa of the substrate; depositiong photoresist on the cap layer to form a flattened surface; removing the photoresist to expose the mesa of the cap layer; removing a portion of the cap layer using the photoresist remaining on the cap layer as a mask to make the surface of the cap layer approximately flat; depositing a thin film to be used as a mask for proton or ion bombardment on the cap layer and on the remaining photoresist; removing the remaining photoresist and the thin film on the remaining photoresist; and bombarding the cap layer with protons and ions using the remaining thin film on the cap layer as a mask to produce higher resistivity regions adjacent the remaining thin film than directly below the remaining thin film. Therefore, highly reliable semiconductor laser devices having good and uniform characteristics can be realized. |
| 公开日期 | 1992-09-22 |
| 申请日期 | 1991-06-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45709]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | ISSHIKI, KUNIHIKO. Method for producing semiconductor light emitting device. US5149670. 1992-09-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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