Light emitting device having current blocking structure
文献类型：专利
| 作者 | SAKATA, YASUTAKA |
| 发表日期 | 1998-12-08 |
| 专利号 | US5847415 |
| 著作权人 | RENESAS ELECTRONICS CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Light emitting device having current blocking structure |
| 英文摘要 | A pair of SiO2 stripe masks are formed on a p-InP substrate (31) with a separation of 5 mu m in [011] direction and an optical waveguide including a p-InP clad layer (32), an active layer (33) and an n-InP clad layer (34) is formed on the p-InP substrate (31) at the 5 mu m exposed area according to MOVPE selective growth process. Both sides of the optical waveguide are buried with pnpn current blocking structure according to the MOVPE selective growth, wherein a p-InP layer (36) and n-InP layer (37) are formed, then a surface of the n-InP layer (37) is inverted to p-type to form a p-InP inversion layer (38) according to Zn open tube diffusion process carried out in MOVPE system, thereby the interconnection between the n-InP layer (37) and the n-InP clad layer (34) is prevented, and then a p-InP layer (39) and n-InP layer (40) are formed. An n-InP layer (41) is formed thereon. |
| 公开日期 | 1998-12-08 |
| 申请日期 | 1996-04-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45711]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RENESAS ELECTRONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | SAKATA, YASUTAKA. Light emitting device having current blocking structure. US5847415. 1998-12-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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