Semiconductor laser device, semiconductor laser module, and optical fiber amplifier using the semiconductor laser module
文献类型：专利
| 作者 | YOSHIDA, JUNJI; TSUKIJI, NAOKI; KIMURA, TOSHIO; NAKAE, MASASHI; AIKIYO, TAKESHI |
| 发表日期 | 2007-03-20 |
| 专利号 | US7194014 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device, semiconductor laser module, and optical fiber amplifier using the semiconductor laser module |
| 英文摘要 | A semiconductor laser device having two active-layer stripe structures includes an n-InP substrate, an n-InP clad layer, a lower GRIN-SCH layer, an active layer, an upper GRIN-SCH layer, a p-InP clad layer, and a p-InGaAsP contact layer grown in this order, in a side cross section cut along one of the stripe structure. A high-reflection film is disposed on a reflection-side end surface, and a low-reflection film is disposed on an emission-side end surface. A p-side electrode is disposed on only a part of the upper surface of the p-InGaAsP contact layer so that a current non-injection area is formed on an area absent the p-side electrode. |
| 公开日期 | 2007-03-20 |
| 申请日期 | 2003-12-31 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45712]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | YOSHIDA, JUNJI,TSUKIJI, NAOKI,KIMURA, TOSHIO,et al. Semiconductor laser device, semiconductor laser module, and optical fiber amplifier using the semiconductor laser module. US7194014. 2007-03-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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