Compound semiconductor light emitting device and method of fabricating the same
文献类型：专利
| 作者 | HORIE, HIDEYOSHI; OHTA, HIROTAKA; FUJIMORI, TOSHINARI |
| 发表日期 | 2004-06-01 |
| 专利号 | US6744074 |
| 著作权人 | MITSUBISHI CHEMICAL CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Compound semiconductor light emitting device and method of fabricating the same |
| 英文摘要 | Compound semiconductor light emitting devices capable of suppressing the surface state density on the facets of semiconductor light emitting devices such as semiconductor lasers for a long time and stable operating even when the passivation layer diffuses can be easily obtained. Compound semiconductor light emitting devices with an emission wavelength of lambda (nm) wherein a first conduction type of clad layer, an active layer and a second conduction type of clad layer are grown on a substrate and two facets are opposite to each other so as to form a cavity, characterized in that said active layer is transparent to the emission wavelength in the vicinities of the facets and that the surfaces of the first conduction type of clad layer, active layer and second conduction type of clad layer forming said facets are each coated with a passivation layer. |
| 公开日期 | 2004-06-01 |
| 申请日期 | 2001-10-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45719]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CHEMICAL CORPORATION |
| 推荐引用方式 GB/T 7714 | HORIE, HIDEYOSHI,OHTA, HIROTAKA,FUJIMORI, TOSHINARI. Compound semiconductor light emitting device and method of fabricating the same. US6744074. 2004-06-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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