Multiple-wavelength laser diode array using quantum well band filling
文献类型：专利
| 作者 | BOUR, DAVID P.; BRINGANS, ROSS D. |
| 发表日期 | 1999-11-09 |
| 专利号 | US5982799 |
| 著作权人 | XEROX CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Multiple-wavelength laser diode array using quantum well band filling |
| 英文摘要 | A multiple-wavelength laser diode array is described. A wavelength span of several tens of nanometers is achieved through band-filling of a quantum well active region. A multiple-wavelength array is formed by selectively introducing different amounts of optical loss into the array elements, to affect the threshold current density. With minimum losses, the laser oscillates at a long wavelength, while an element with high loss will undergo more bandfilling and be forced to emit at a shorter wavelength. To illustrate the structures which incorporate these additional, selective losses, a 2-red-wavelength AlGaInP laser array is described. In preferred embodiments, increased optical loss is achieved in an SBR type laser by narrowing the ridge region, or by reducing its thickness. In another type of laser, increased optical loss is achieved by a very thin upper cladding layer causing increased optical absorption in a close overlying cap or metal layer. |
| 公开日期 | 1999-11-09 |
| 申请日期 | 1997-03-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45720]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION |
| 推荐引用方式 GB/T 7714 | BOUR, DAVID P.,BRINGANS, ROSS D.. Multiple-wavelength laser diode array using quantum well band filling. US5982799. 1999-11-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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