Semiconductor light sources with doping gradients in optical confinement layers for improved device efficiency
文献类型：专利
| 作者 | BOTEZ, DAN |
| 发表日期 | 2005-06-14 |
| 专利号 | US6907056 |
| 著作权人 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light sources with doping gradients in optical confinement layers for improved device efficiency |
| 英文摘要 | Semiconductor light emitting sources are formed to have a substrate, an active region layer having one or more quantum wells, optical confinement layers surrounding the active region layer, and a p-type cladding layer and an n-type cladding layer surrounding the confinement layers and the active region layer. At least one of the optical confinement layers has a region of doping therein that is formed to provide a built-in electric field in the confinement layer that is directed to cause drift of carriers toward the active region. The electric field increases the transport speed of the injected holes or electrons, thereby reducing the non-ohmic voltage drop and increasing the overall efficiency of the light emitting source. |
| 公开日期 | 2005-06-14 |
| 申请日期 | 2003-08-08 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45722]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
| 推荐引用方式 GB/T 7714 | BOTEZ, DAN. Semiconductor light sources with doping gradients in optical confinement layers for improved device efficiency. US6907056. 2005-06-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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