Semiconductor laser with a self sustained pulsation
文献类型:专利
作者 | YODOSHI, KEIICHI; IBARAKI, AKIRA; SHONO, MASAYUKI; HONDA, SHOJI; IKEGAMI, TAKATOSHI; HAYASHI, NOBUHIKO; FURUSAWA, KOUTAROU; TAJIRI, ATUSHI; ISHIKAWA, TORU; MATSUKAWA, KENICHI |
发表日期 | 1997-03-11 |
专利号 | US5610096 |
著作权人 | SANYO ELECTRIC CO., LTD. |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor laser with a self sustained pulsation |
英文摘要 | A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer. |
公开日期 | 1997-03-11 |
申请日期 | 1995-09-29 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/45734] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SANYO ELECTRIC CO., LTD. |
推荐引用方式 GB/T 7714 | YODOSHI, KEIICHI,IBARAKI, AKIRA,SHONO, MASAYUKI,et al. Semiconductor laser with a self sustained pulsation. US5610096. 1997-03-11. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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