中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser with a self sustained pulsation

文献类型:专利

作者YODOSHI, KEIICHI; IBARAKI, AKIRA; SHONO, MASAYUKI; HONDA, SHOJI; IKEGAMI, TAKATOSHI; HAYASHI, NOBUHIKO; FURUSAWA, KOUTAROU; TAJIRI, ATUSHI; ISHIKAWA, TORU; MATSUKAWA, KENICHI
发表日期1997-03-11
专利号US5610096
著作权人SANYO ELECTRIC CO., LTD.
国家美国
文献子类授权发明
其他题名Semiconductor laser with a self sustained pulsation
英文摘要A semiconductor laser with a self-sustained pulsation is disclosed in which a first cladding layer of first conductive type, an active layer and a second cladding layer of second conductive type having a striped ridge are formed in that order on a semiconductor substrate of first conductive type. The first and second cladding layers have a refractive index smaller than and a band gap larger than the active layer. A saturable optical absorbing layer having a band gap of energy substantially equal to the energy corresponding to lasing wavelength is formed in both the first and second cladding layers. Further, a barrier layer having a refractive index smaller than and a band gap larger than the first and second cladding layers is formed between the first cladding layer and the active layer and/or between the active layer and the second cladding layer.
公开日期1997-03-11
申请日期1995-09-29
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/45734]  
专题半导体激光器专利数据库
作者单位SANYO ELECTRIC CO., LTD.
推荐引用方式
GB/T 7714
YODOSHI, KEIICHI,IBARAKI, AKIRA,SHONO, MASAYUKI,et al. Semiconductor laser with a self sustained pulsation. US5610096. 1997-03-11.

入库方式: OAI收割

来源:西安光学精密机械研究所

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