Multi-tip semiconductor laser
文献类型：专利
| 作者 | BAN, YUZABURO; SAITOH, TOURU; NARUSAWA, TADASI; OHNAKA, KIYOSHI |
| 发表日期 | 1994-03-29 |
| 专利号 | US5299218 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Multi-tip semiconductor laser |
| 英文摘要 | A multi-tip semiconductor laser comprises: a substrate; a cladding layer; an active layer formed of alkali-halide crystal on the cladding layer; at least a field emission tip formed on a surface of the substrate to have a substantially corn shape, the field emission tip being so arranged to confront the active layer; a vacuum space structure for providing a space between substrate and the cladding layer with the field emission tip confronting the active layer and for maintaining the space in a vacuum state; and an electrode structure for a producing electrostatic field between the field emission tip and the same in response to an external voltage supply such that the field emission tip emits an electron beam toward the active layer. The active layer may be doped and be made of organic crystal. It may further comprises a conducting layer covering at least a portion of said active layer. The active layer may be formed in a channel formed in the anode layer. The active layer may be formed in a capillary buried in a channel formed in the anode layer. This multi-tip semiconductor laser emits blue laser light. |
| 公开日期 | 1994-03-29 |
| 申请日期 | 1992-07-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45749]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | BAN, YUZABURO,SAITOH, TOURU,NARUSAWA, TADASI,et al. Multi-tip semiconductor laser. US5299218. 1994-03-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。