光双安定集積素子
文献类型：专利
| 作者 | 寺門 知二; 藤原 雅彦 |
| 发表日期 | 1994-05-18 |
| 专利号 | JP1994038539B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 光双安定集積素子 |
| 英文摘要 | PURPOSE:To obtain a compact optical bistable integrated element characterized by high efficiency, high reliability, a low price and easy manufacture, by integrating an optical bistable semiconductor laser and semiconductor laser switches, which are arranged in the axial direction of a resonator, on the same substrate. CONSTITUTION:On an N-InP substrate 10, an N-InP buffer layer 11, a non-doped In0.71Ga0.29As0.61P0.39 active layer 12 and InP clad layer 13 are laminated. A wafer having grooves 14 and 15 is formed on the DH substrate by a photolithography method. First and second current blocking layers 16 and 17 are sequentially formed on the wafer. The layers 16 and 17 are not grown on a mesa stripe 18. Then, an N-InP embedded layer 19 and a P-In0.75Ga0.25As0.47P0.53 cap layer 20 are sequentially formed. A P-side electrode 21 is formed and divided by a groove 22. The layer 20 is etched away. Photoresist is applied, and two semiconductor laser switches 26 and 27 and an optical bistable semiconductor laser 28 are isolated. Grooves 23 and 24, which also serve as reflecting mirrors, are formed. The substrate 10 is polished, and an N-side electrode 25 is provided. |
| 公开日期 | 1994-05-18 |
| 申请日期 | 1985-03-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45752]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 寺門 知二,藤原 雅彦. 光双安定集積素子. JP1994038539B2. 1994-05-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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