Electrically pumped edge-emitting photonic bandgap semiconductor laser
文献类型：专利
| 作者 | LIN, SHAWN-YU; ZUBRZYCKI, WALTER J. |
| 发表日期 | 2004-01-06 |
| 专利号 | US6674778 |
| 著作权人 | NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Electrically pumped edge-emitting photonic bandgap semiconductor laser |
| 英文摘要 | A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region. |
| 公开日期 | 2004-01-06 |
| 申请日期 | 2002-01-09 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45753]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC |
| 推荐引用方式 GB/T 7714 | LIN, SHAWN-YU,ZUBRZYCKI, WALTER J.. Electrically pumped edge-emitting photonic bandgap semiconductor laser. US6674778. 2004-01-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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