II-VI semiconductor diode laser having a strained layer
文献类型：专利
| 作者 | HABERERN, KEVIN W.; DRENTEN, RONALD R. |
| 发表日期 | 1996-10-01 |
| 专利号 | US5561680 |
| 著作权人 | PHILIPS ELECTRONICS NORTH AMERICA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | II-VI semiconductor diode laser having a strained layer |
| 英文摘要 | A II-VI semiconductor diode laser has a strained layer disposed on top of the structure. This strained layer, having a thickness of between about 0.05 microns and 2 microns, is either a single film or a stack of films, preferably of metal. The strain field produced by this layer in the semiconductor layer structure produces a change in the refractive index of the structure, due to the photo-elastic effect. By virtue of this effect a strain-induced waveguide is provided in the diode laser, with a strained layer in an edge, stripe or window structure. Furthermore, a tensely-strained layer covering the entire structure is used to produce a strain field similar to that which occurs when the structure is bent. This strain field will produce strain-enhanced gain in the underlying structure, which allows for operation of the laser at a lower threshold current. |
| 公开日期 | 1996-10-01 |
| 申请日期 | 1994-12-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45754]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PHILIPS ELECTRONICS NORTH AMERICA CORPORATION |
| 推荐引用方式 GB/T 7714 | HABERERN, KEVIN W.,DRENTEN, RONALD R.. II-VI semiconductor diode laser having a strained layer. US5561680. 1996-10-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。