Selective growth mask,fabricating method of semiconductor optical device,and semiconductor optical device
文献类型：专利
| 作者 | TAKUSHI, ITAGAKI; TOHRU, TAKIGUCHI; YUTAKA, MIHASHI; AKIRA, TAKEMOTO; TAKUSHI, , ITAGAKI; TOHRU, , TAKIGUCHI; YUTAKA, , MIHASHI; AKIRA, , TAKEMOTO |
| 发表日期 | 1997-04-02 |
| 专利号 | GB2300516B |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 授权发明 |
| 其他题名 | Selective growth mask,fabricating method of semiconductor optical device,and semiconductor optical device |
| 英文摘要 | A selective growth mask used for forming a semiconductor layer constituting a stripe shaped waveguide disposed connecting the resonator facets of a semiconductor optical device which has integrated a laser diode and optical waveguide lens continuously in the resonator length direction (10) between a pair of resonator facets by selective region growth, comprises: a pair of dielectric material films (2a, 2b) disposed on a surface of a substrate (1) on which a semiconductor layer constituting the optical waveguide is grown, having a plan view configuration of linear symmetry against a supposed line extending in the resonator length direction (10) on the substrate surface (1); opposing edges of the dielectric films (2a, 2b) being parallel with the supposed line; ; the widths in the direction perpendicular to the resonator length direction (10) of the dielectric films (2a, 2b) both becoming gradually narrower toward the ends in the resonator length direction (10) of the films (2a, 2b) from a predetermined position in the resonator length direction (10) of the films (2a, 2b). Therefore, the design of a mask pattern which can perform precise layer thickness profile control can be easily performed. |
| 公开日期 | 1997-04-02 |
| 申请日期 | 1996-04-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45757]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TAKUSHI, ITAGAKI,TOHRU, TAKIGUCHI,YUTAKA, MIHASHI,et al. Selective growth mask,fabricating method of semiconductor optical device,and semiconductor optical device. GB2300516B. 1997-04-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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