Optical semiconductor device and process of prodcuing same
文献类型：专利
| 作者 | FUJII, TAKUYA |
| 发表日期 | 1994-07-05 |
| 专利号 | US5327450 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical semiconductor device and process of prodcuing same |
| 英文摘要 | An optical semiconductor device and a process of producing same ensuring a good device performance when a diffraction grating is formed by dry etching and component crystal layers are formed by an MOCVD process. The production process comprises the steps of: (1) processing a surface of a semiconductor wafer to form thereon a diffraction grating in the form of a periodic corrugation for selectively transmitting a light having a specific wavelength; (2) forming on the diffraction grating a guide layer, an active layer and a clad layer in that order; (3) forming on the clad layer a double heterostructure composed of lower and upper layers, the upper layer having a bandgap greater than that of the active layer; (4) measuring the photoluminescence intensity of the lower layer of the double heterostructure; and (5) determining whether or not subsequent process steps necessary for completing the optical semiconductor device should be executed, by using the measured value of the photoluminescence intensity as a discriminative value. |
| 公开日期 | 1994-07-05 |
| 申请日期 | 1992-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45761]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | FUJII, TAKUYA. Optical semiconductor device and process of prodcuing same. US5327450. 1994-07-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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