集積型半導体光変調器
文献类型：专利
| 作者 | 山口 昌幸 |
| 发表日期 | 1997-01-09 |
| 专利号 | JP2596186B2 |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 集積型半導体光変調器 |
| 英文摘要 | PURPOSE:To ensure optical transmission without transmission power penalty by integrating on the same semiconductor substrate a distributed feedback type semiconductor laser having a diffraction grating and an electric field absorption type semiconductor optical modulator with a changing light absorption characteristic, thereby elongating the resonator length. CONSTITUTION:A diffraction grating 2 is formed on a surface of an n-InP semiconductor substrate 1 at a portion corresponding to a lasing region of the same, and is adapted to be a phase drift type diffusion grating having a phase shift part 3 at the center of the lasing region. There are selectively formed on the semiconductor substrate 1 a 15mum band-gap wavelength InGaAsP light guide layer 4, an InGaAs/InGaAsP multiple quantum well active layer 5 formed on the lasing region on the former, and an InGaAsP optical absorption layer 6 formed on a modulation region. A p-InP cladding layer 7 and a p- InGaAs capping layer 8 are formed on the active layer 5 and the absorption layer 6, and the capping layer 8 isolates a lasing part from a modulation part. The lasing part is made 600mum or more in its length. |
| 公开日期 | 1997-04-02 |
| 申请日期 | 1990-06-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45770]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | 山口 昌幸. 集積型半導体光変調器. JP2596186B2. 1997-01-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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