Phonon-pumped semiconductor lasers
文献类型：专利
| 作者 | SOREF, RICHARD A.; SUN, GREGORY |
| 发表日期 | 2003-09-16 |
| 专利号 | US6621841 |
| 著作权人 | AIR FORCE, GOVERNMENT OF THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Phonon-pumped semiconductor lasers |
| 英文摘要 | The first phonon-pumped semiconductor laser. The active region is an unbiased boron-doped Si0.94Ge0.06/Si superlattice with Si0.97Ge0.03 buffer layers embedded in a surface-plasmon strip waveguide. Warm and cool heat sinks create a temperature gradient across the waveguide. A heat buffer layer adjacent to the cool sink reflects optical phonons and transmits acoustic phonons. Within the resonator, the difference in effective temperatures of optical and acoustic phonons provides hole pumping for the lasing transition between the heavy-hole 2 (HH2) and heavy-hole 1(HH1) minibands. A gain of 280/cm at the 5THz emission frequency is predicted for 6x1017/cm3 doping at temperatures of 300K and 77K for optical and acoustic phonons, respectively. |
| 公开日期 | 2003-09-16 |
| 申请日期 | 2002-04-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45771]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AIR FORCE, GOVERNMENT OF THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE |
| 推荐引用方式 GB/T 7714 | SOREF, RICHARD A.,SUN, GREGORY. Phonon-pumped semiconductor lasers. US6621841. 2003-09-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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