Low operating current and low noise semiconductor laser device for optical disk memories
文献类型：专利
| 作者 | NAITO, HIROKI; KUME, MASAHIRO; SUGIURA, HIDEYUKI; TAKAYAMA, TORU; ITOH, KUNIO; OHTA, ISSEI; SHIMIZU, HIROKAZU |
| 发表日期 | 1995-01-31 |
| 专利号 | US5386429 |
| 著作权人 | APPLETON ELECTRIC LLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Low operating current and low noise semiconductor laser device for optical disk memories |
| 英文摘要 | A semiconductor laser device suitable as a light source for an optical disk may be operated at a low operating current with low noise for the 780 nm band. The device comprises: a certain conduction type Ga1-Y1AlY1As first light guide layer, a Ga1-Y2AlY2As second light guide layer of said certain conduction type, or an In0.5Ga0.5P or an In0.5(GaAl)0.5P or an InGaAsP second light guide layer, successively formed one upon another at least in one side of the principal plane of an active layer; an opposite conduction type Ga1-ZAlZAs current blocking layer formed on the second light guide layer and provided with a stripe-like window; and a Ga1-Y3AlY3As cladding layer of the same conduction type as the light guide layers formed on the stripe-like window. The relations of Z>Y3>Y2 and Y1>Y2 define the AlAs mole fractions. |
| 公开日期 | 1995-01-31 |
| 申请日期 | 1993-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45781]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | APPLETON ELECTRIC LLC |
| 推荐引用方式 GB/T 7714 | NAITO, HIROKI,KUME, MASAHIRO,SUGIURA, HIDEYUKI,et al. Low operating current and low noise semiconductor laser device for optical disk memories. US5386429. 1995-01-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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