分布反射型半導体レ-ザ及びその製法
文献类型：专利
| 作者 | 東盛 裕一; 吉国 裕三; 野口 悦男; 河口 仁司; 板屋 義夫 |
| 发表日期 | 1995-01-18 |
| 专利号 | JP1995003901B2 |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 分布反射型半導体レ-ザ及びその製法 |
| 英文摘要 | PURPOSE:To enable laser oscillation with high efficiency by forming two groove rows for distributed Bragg reflection to a semiconductor substrate and shaping a semiconductor layer as a waveguide for optical propagation and a semiconductor layer as a waveguide for lightpropagation. CONSTITUTION:Groove rows 6A, 6B for first and second distributed Bragg reflection are formed in such a manner that groove rows 6 for distributed Bragg reflection are shaped to the main surface side of a semiconductor substrate 1 and a recessed section 21 is formed to the 1 semiconductor substrate. A first semiconductor layer 7 as a waveguide for optical propagation and a second semiconductor layer 3 as a waveguide for light emission are shaped. Consequently, the state in which field distribution based on beams propagated to the second semiconductor layer 3 as the waveguide for light emission is matched with field distribution based on beams propagated to the first semiconductor layer 7 as the waveguide for optical propagation even on the second semiconductor layer side is acquired. Accordingly, the coupling efficiency of the waveguide for light emission and the waveguide for optical propagation is improved, thus enhancing the efficiency of laser oscillation. |
| 公开日期 | 1995-01-18 |
| 申请日期 | 1986-10-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45787]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | 東盛 裕一,吉国 裕三,野口 悦男,等. 分布反射型半導体レ-ザ及びその製法. JP1995003901B2. 1995-01-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。