Method of growing epitaxial layers
文献类型：专利
| 作者 | FUJII, TOSHIO; SANDHU, ADARSH |
| 发表日期 | 1995-12-19 |
| 专利号 | US5476811 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of growing epitaxial layers |
| 英文摘要 | A method of growing a plurality of epitaxial layers each having a property which is different from each other simultaneously on a common substrate comprises steps of forming at least a first crystal surface and a second crystal surface which are crystallographically non-equivalent to each other on the substrate, introducing particles comprising constituent elements of the epitaxial layers into a region in the vicinity of the substrate, the particles including at least metal-organic molecules containing one of the elements constituting the epitaxial layers, decomposing the metal-organic molecules such that the layer constituting element therein is released as a result of the decomposition, and depositing the aforesaid particles including the element released by the decomposition of the metal-organic molecules on the first and second crystal surfaces so that a first epitaxial layer and a second epitaxial layer, respectively differing in properties from each other, are grown on respective the first and second crystal surfaces, the step of deposition being performed such that the growth of the first and second epitaxial layers is controlled by the decomposition of the metal-organic molecule. |
| 公开日期 | 1995-12-19 |
| 申请日期 | 1995-03-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45788]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | FUJII, TOSHIO,SANDHU, ADARSH. Method of growing epitaxial layers. US5476811. 1995-12-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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