Thin INP spacer layer in a high speed laser for reduced lateral current spreading
文献类型：专利
| 作者 | VERMA, ASHISH K.; THIYAGARAJAN, SUMESH MANI K.; YOUNG, DAVID BRUCE; HA, YUK LUNG; DIMITROV, ROMAN |
| 发表日期 | 2009-10-20 |
| 专利号 | US7606279 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Thin INP spacer layer in a high speed laser for reduced lateral current spreading |
| 英文摘要 | Embodiments disclosed herein relate to high-speed lasers such as FP and DFB lasers. In one embodiment, the high speed laser comprises a substrate, an active region positioned above the substrate, a mesa positioned above the active region, and one or more layers disposed between the active region and the mesa, wherein the thickness of at least one of the one or more layers is implemented to at least partially minimize the distance between the mesa and active region such that lateral current spreading between the mesa and the active region is at least partially minimized. |
| 公开日期 | 2009-10-20 |
| 申请日期 | 2007-05-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45790]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | VERMA, ASHISH K.,THIYAGARAJAN, SUMESH MANI K.,YOUNG, DAVID BRUCE,et al. Thin INP spacer layer in a high speed laser for reduced lateral current spreading. US7606279. 2009-10-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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