中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High output semiconductor laser element having robust electrode structure

文献类型:专利

作者KIMURA, YUJI; ATSUMI, KINYA; ABE, KATSUNORI; TOYAMA, TETSUO
发表日期1998-08-04
专利号US5790577
著作权人NIPPONDENSO CO., LTD.
国家美国
文献子类授权发明
其他题名High output semiconductor laser element having robust electrode structure
英文摘要A high-output semiconductor laser element has one of a Cr/Pt/Au electrode and Cr/Ni/Au electrode as a P-type electrode to provide an electrode construction that is robust with respect to heat, high in reliability and stable for a long period of time. The P-type electrode is disposed on an N-type substrate via an epitaxial layer and defines a stripe 41 having a width of 100 mu m or more.
公开日期1998-08-04
申请日期1996-09-30
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/45791]  
专题半导体激光器专利数据库
作者单位NIPPONDENSO CO., LTD.
推荐引用方式
GB/T 7714
KIMURA, YUJI,ATSUMI, KINYA,ABE, KATSUNORI,et al. High output semiconductor laser element having robust electrode structure. US5790577. 1998-08-04.

入库方式: OAI收割

来源:西安光学精密机械研究所

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