Nitride based semiconductor device and fabrication method for the same
文献类型：专利
| 作者 | NAKAGAWA, DAISUKE; TANAKA, YOSHINORI; MURAYAMA, MASAHIRO; FUJIMORI, TAKAO; KOHDA, SHINICHI |
| 发表日期 | 2012-03-27 |
| 专利号 | US8144743 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride based semiconductor device and fabrication method for the same |
| 英文摘要 | A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided. |
| 公开日期 | 2012-03-27 |
| 申请日期 | 2009-03-04 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45793]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | NAKAGAWA, DAISUKE,TANAKA, YOSHINORI,MURAYAMA, MASAHIRO,et al. Nitride based semiconductor device and fabrication method for the same. US8144743. 2012-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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