Semiconductor laser structure
文献类型：专利
| 作者 | GOODWIN, FRANK E.; LAW, HSIANG-YI D.; MORRISON, CHARLES B.; FIGUEROA, LUIS |
| 发表日期 | 1986-12-23 |
| 专利号 | US4631729 |
| 著作权人 | TRW INC., ONE SPACE PARK, REDONDO BEACH, CA ACORP OF |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser structure |
| 英文摘要 | A semiconductor laser array structure operable at relatively high powers and high brightness levels compared with prior laser arrays. At least two principal lasing regions are formed in a single active layer of the structure, and are closely coupled by an intermediate region in which there is optical gain. Preferably, the dimensions of the structure are selected to provide single-filament lasing in the principal lasing regions and in the intermediate region, resulting in a composite output that is apparently phase-locked and has a high-brightness, single-lobe far-field radiation distribution pattern with a low divergence angle. The disclosed structure uses gallium arsenide and gallium aluminum arsenide materials and is fabricated using liquid-phase epitaxy. Longitudinal mode selection in the device may be accomplished by configuring the two channels to produce different sets of longitudinal modes, the close coupling of the two regions resulting in the output of only those modes common to both regions. |
| 公开日期 | 1986-12-23 |
| 申请日期 | 1983-12-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45797]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TRW INC., ONE SPACE PARK, REDONDO BEACH, CA ACORP OF |
| 推荐引用方式 GB/T 7714 | GOODWIN, FRANK E.,LAW, HSIANG-YI D.,MORRISON, CHARLES B.,et al. Semiconductor laser structure. US4631729. 1986-12-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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