Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
文献类型：专利
| 作者 | KONG, HUA-SHUANG; EDMOND, JOHN ADAM; HABERERN, KEVIN WARD; EMERSON, DAVID TODD |
| 发表日期 | 2004-10-12 |
| 专利号 | US6803602 |
| 著作权人 | CREE, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures |
| 英文摘要 | A method of fabricating a gallium nitride-based semiconductor structure on a substrate includes the steps of forming a mask having at least one opening therein directly on the substrate, growing a buffer layer through the opening, and growing a layer of gallium nitride upwardly from the buffer layer and laterally across the mask. During growth of the gallium nitride from the mask, the vertical and horizontal growth rates of the gallium nitride layer are maintained at rates sufficient to prevent polycrystalline material nucleating on said mask from interrupting the lateral growth of the gallium nitride layer. In an alternative embodiment, the method includes forming at least one raised portion defining adjacent trenches in the substrate and forming a mask on the substrate, the mask having at least one opening over the upper surface of the raised portion. A buffer layer may be grown from the upper surface of the raised portion. The gallium nitride layer is then grown laterally by pendeoepitaxy over the trenches. |
| 公开日期 | 2004-10-12 |
| 申请日期 | 2003-05-02 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45807]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CREE, INC. |
| 推荐引用方式 GB/T 7714 | KONG, HUA-SHUANG,EDMOND, JOHN ADAM,HABERERN, KEVIN WARD,et al. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures. US6803602. 2004-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。