二方向注入型半導体レーザ装置
文献类型：专利
| 作者 | 鈴木 克弘 |
| 发表日期 | 1998-08-14 |
| 专利号 | JP2815165B2 |
| 著作权人 | 工業技術院長 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 二方向注入型半導体レーザ装置 |
| 英文摘要 | PURPOSE:To perform two independent carrier injections and construct a monolithic integrated optical transmitting and receiving circuit by making up a structure in such a way that clad layers located on both sides of an active layer are formed as n-type layers and a clad layer located on the lower side of the active layer is formed as a high resistance layer. CONSTITUTION:When an electric current is supplied to an electrode 108 and between electrodes 107a and 107b, holes are injected from a p-type AlGaAs clad layer 103 located on the upper side and electrons are injected from an n-type AlGaAs clad layer located on the left or the right side. Consequently, the injection of carriers is performed into an active layer from two directions and each injection is carried out independently, Further, as an AlGaAs layer 101 located on the lower side of the active layer is a high resistance layer and is separated electrically into two parts of n-type AlGaAs located on both sides, these elements are integrated on the same substrate and the formation of a semiconductor device equipped with an independent carrier injection mechanism is realized. Since a photodetector and a laser are manufactured to have the same structure on a substrate, a monolithic integrated optical transmitting and receiving circuit is thus constructed. |
| 公开日期 | 1998-10-27 |
| 申请日期 | 1989-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45809]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 工業技術院長 |
| 推荐引用方式 GB/T 7714 | 鈴木 克弘. 二方向注入型半導体レーザ装置. JP2815165B2. 1998-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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