分布反射型半導体レーザの製造方法
文献类型：专利
| 作者 | 狩野 文良; 東盛 裕一 |
| 发表日期 | 1995-11-22 |
| 专利号 | JP1995109922B2 |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 分布反射型半導体レーザの製造方法 |
| 英文摘要 | PURPOSE:To prevent optical reflection and scattering in the junction part by a method wherein a mask area is minimized, and an active waveguide path layer and an non-active waveguide layer, whereon a grating having the uniform pitch and depth is formed, are connected by a vapor phase epitaxial method while being optically matched and collated. CONSTITUTION:An active waveguide path layer 2 and a protective layer 3A having the thickness, wherein the thickness of the layer 2 is deducted from the thickness of a non-active waveguide path layer 3 being optically matched and connected with the layer 2, are in order laminated on an n-type semiconductor substrate 1 and thereon an insular prescribed region 3B, whose area is as much as possible minimized, is formed, while forming a non-active waveguide path layer 3 whose thickness is equal to that of a laminated construction and which has an almost flat top side is formed by a vapor epitaxial growth method only on the region, where the laminated construction except the region 3B is removed, next, a grating 10 is formed on the top of the protective layer 3A and the layer 3, further on their top side, a p-type clad layer 4 is formed of the same material with the protective layer 3A. Thereby, the thickness of the non-active waveguide path layer 3 becomes uniform in the connection part while having good crystallization so as to prevent reflection and scattering in the junction part. |
| 公开日期 | 1995-11-22 |
| 申请日期 | 1988-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45812]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | 狩野 文良,東盛 裕一. 分布反射型半導体レーザの製造方法. JP1995109922B2. 1995-11-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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