Compound semiconductor devices and methods of making compound semiconductor devices
文献类型：专利
| 作者 | ISHIKAWA, MASAYUKI; NISHIKAWA, YUKIE; ONOMURA, MASAAKI; SAITO, SHINJI; PARBROOK, PETER J.; HATAKOSHI, GENICHI |
| 发表日期 | 1996-12-17 |
| 专利号 | US5585649 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Compound semiconductor devices and methods of making compound semiconductor devices |
| 英文摘要 | A compound semiconductor device with an improved internal current blocking structure. The semiconductor device includes an n-clad layer of II-VI compound semiconductor, a p-clad layer of II-VI compound semiconductor, an active layer of II-VI compound semiconductor between the n-clad and p-clad layers, a very thin current blocking layer of n-type II-VI compound semiconductor on the p-clad layer and providing an opening, a p-contact layer of p-type II-VI compound semiconductor on the p-clad layer and the current blocking layer at the opening, and a p-side electrode on the p-contact layer. |
| 公开日期 | 1996-12-17 |
| 申请日期 | 1995-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45814]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | ISHIKAWA, MASAYUKI,NISHIKAWA, YUKIE,ONOMURA, MASAAKI,et al. Compound semiconductor devices and methods of making compound semiconductor devices. US5585649. 1996-12-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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