Mode-locked semiconductor laser and method of driving the same
文献类型:专利
作者 | SHIMIZU, TAKANORI; YOKOYAMA, HIROYUKI; YAMAGUCHI, MASAYUKI |
发表日期 | 2000-02-29 |
专利号 | US6031851 |
著作权人 | NEC CORPORATION |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Mode-locked semiconductor laser and method of driving the same |
英文摘要 | There is provided a mode-locked semiconductor laser including a saturable absorber section, a gain section having the same composition as that of the saturable absorber section, a non-absorptive waveguide section having an absorption edge wavelength shorter than an oscillation wavelength of the gain section, an electroabsorption modulator section having an absorption edge wavelength intermediate between an oscillation wavelength of the gain section and an absorption edge wavelength of the non-absorptive waveguide section, and a distributed Bragg reflector section having the same composition as that of the non-absorptive waveguide section and including a diffraction grating. These five sections are optically coupled to one another in a single waveguide. The above-mentioned mode-locked semiconductor laser makes it possible to enhance an efficiency with which high frequency signals are applied thereto, with conditions for causing saturable absorption operation, such as a section length and a bias voltage, being kept in an optimal range. |
公开日期 | 2000-02-29 |
申请日期 | 1997-10-09 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/45816] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NEC CORPORATION |
推荐引用方式 GB/T 7714 | SHIMIZU, TAKANORI,YOKOYAMA, HIROYUKI,YAMAGUCHI, MASAYUKI. Mode-locked semiconductor laser and method of driving the same. US6031851. 2000-02-29. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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