Semiconductor laser device and optical disk apparatus using the same
文献类型：专利
| 作者 | ADACHI, HIDETO; KAMIYAMA, SATOSHI; KIDOGUCHI, ISAO; UENOYAMA, TAKESHI; MANNOH, MASAYA; FUKUHISA, TOSHIYA |
| 发表日期 | 2000-10-31 |
| 专利号 | US6141364 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and optical disk apparatus using the same |
| 英文摘要 | A semiconductor laser device of the present invention includes a substrate 201 made of n-type GaAs, an active layer 204, and a pair of cladding layers sandwiching the active layer 204. The device further includes a spacer layer 205 adjacent to the active layer 204 and a highly doped saturable absorbing layer 206. The carrier life time is shortened by doping the saturable absorbing layer 206 in a high concentration, whereby stable self-sustained pulsation can be obtained. As a result, a semiconductor laser device can be obtained, which has a low relative noise intensity in a wide range of temperatures. |
| 公开日期 | 2000-10-31 |
| 申请日期 | 1999-07-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45824]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD |
| 推荐引用方式 GB/T 7714 | ADACHI, HIDETO,KAMIYAMA, SATOSHI,KIDOGUCHI, ISAO,et al. Semiconductor laser device and optical disk apparatus using the same. US6141364. 2000-10-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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