Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof
文献类型：专利
| 作者 | KITAOKA, YASUO; MIZUUCHI, KIMINORI; YAMAMOTO, KAZUHISA |
| 发表日期 | 2001-12-04 |
| 专利号 | US6327289 |
| 著作权人 | BOC EDWARDS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof |
| 英文摘要 | A wavelength-variable semiconductor laser includes: a submount; and a semiconductor laser chip being mounted onto the submount and having at least an active layer region and a distributed Bragg reflection region, wherein the semiconductor laser chip is mounted onto the submount in such a manner that an epitaxial growth surface thereof faces the submount and a heat transfer condition of the active layer region is different from a heat transfer condition of the distributed Bragg reflection region. Moreover, an optical integrated device includes at least a semiconductor laser and an optical waveguide device both mounted on a submount, wherein the semiconductor laser is the wavelength-variable semiconductor laser as set forth above. |
| 公开日期 | 2001-12-04 |
| 申请日期 | 1998-09-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45829]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BOC EDWARDS, INC. |
| 推荐引用方式 GB/T 7714 | KITAOKA, YASUO,MIZUUCHI, KIMINORI,YAMAMOTO, KAZUHISA. Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof. US6327289. 2001-12-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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