Optical semiconductor element and method of manufacturing the same
文献类型：专利
| 作者 | TAKABAYASHI, KAZUMASA; YAMAMOTO, TSUYOSHI; KIMURA, TOKUHARU |
| 发表日期 | 2017-07-04 |
| 专利号 | US9698570 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical semiconductor element and method of manufacturing the same |
| 英文摘要 | A quantum dot laser includes a GaAs substrate, a quantum dot active layer which has a barrier layer of GaAs and quantum dots, a GaAs waveguide core layer which is joined to the quantum dot active layer, and a lower cladding layer and an upper cladding layer which sandwich the quantum dot active layer and the GaAs waveguide core layer. The GaAs waveguide core layer extends from a front end of the quantum dot active layer and has a thickness which gradually decreases in a direction to depart from the front end of the quantum dot active layer, a refractive index of a first cladding layer is higher than a refractive index of a second cladding layer. With this structure, expansion of the optical mode diameter that is more than necessary is inhibited to prevent leakage of light, thereby obtaining sufficient optical output. |
| 公开日期 | 2017-07-04 |
| 申请日期 | 2016-07-08 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45836]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | TAKABAYASHI, KAZUMASA,YAMAMOTO, TSUYOSHI,KIMURA, TOKUHARU. Optical semiconductor element and method of manufacturing the same. US9698570. 2017-07-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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