半導体レ—ザ—
文献类型：专利
| 作者 | 関口 芳信; 池田 外充 |
| 发表日期 | 1996-07-25 |
| 专利号 | JP2543551B2 |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ—ザ— |
| 英文摘要 | PURPOSE:To improve index waveguide characteristics without deteriorating characteristics by working damage, and to scale down a far-field patten by forming an optical guide layer to the upper section of an active layer in a ridge waveguide type semiconductor laser and executing mesa working up to a section near the optical guide layer. CONSTITUTION:An N type AlGaAs clad layer 10, an AlGaAs optical confinement layer 9, a multiple quantum well structure (MQW) active layer 8, an AlGaAs optical confinement layer 7, a P-type AlGaAs clad layer 6, an MQW optical guide layer 5, a P-type AlGaAs clad layer 4 and a P type GaAs cap layer 3 are shaped onto an N type GaAs substrate 12. The composition and thickness of each layer are brought so that light waves propagated through the active layer 9 and the optical guide layer 5 are coupled mutually. An SiO insulating film 2 and electrodes 1, 13 are applied after ridge working. Since a mesa working surface on the outside of a ridge is separated sufficiently from the active layer, damage at the time of working has no effect on the active layer. Since an index guide type is formed, astigmatism is removed, and an output can be increased. |
| 公开日期 | 1996-10-16 |
| 申请日期 | 1987-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45838]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | 関口 芳信,池田 外充. 半導体レ—ザ—. JP2543551B2. 1996-07-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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