Semiconductor laser device with ridge structure
文献类型：专利
| 作者 | CHINO, TOYOJI; KUMABUCHI, YASUHITO; KIDOGUCHI, ISAO; ADACHI, HIDETO |
| 发表日期 | 2001-07-24 |
| 专利号 | US6266354 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device with ridge structure |
| 英文摘要 | A semiconductor laser device, including a substrate; a ridge stripe formed on the substrate and including an active layer, an n-cladding layer and p-cladding layer, the n-cladding layer and the p-cladding layer interposing the active layer; in which the ridge stripe has a laser unit which lases. In one embodiment the ridge stripe has a tip portion having a tapered shape, and an angle formed inside the ridge stripe by a bottom surface of the ridge stripe and a side surface of the ridge stripe is in the range of about 60° and about 90°. In one embodiment, the laser device includes a misoriented substrate and the ridge stripe has current blocking layers formed on both sides thereof. |
| 公开日期 | 2001-07-24 |
| 申请日期 | 2000-07-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45839]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | CHINO, TOYOJI,KUMABUCHI, YASUHITO,KIDOGUCHI, ISAO,et al. Semiconductor laser device with ridge structure. US6266354. 2001-07-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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