Buried heterostructure laser modulator
文献类型：专利
| 作者 | SCIORTINO, JR., JOHN C.; RODE, DANIEL L. |
| 发表日期 | 1992-02-25 |
| 专利号 | US5091799 |
| 著作权人 | UNITED STATES OF AMERICA, THE, REPRESENTED BY THE SECRETARY OF THE NAVY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Buried heterostructure laser modulator |
| 英文摘要 | A buried-heterostructure laser modulator for modulating a laser beam includes two adjacent thin epitaxial first layers of oppositely doped semi-conductor material and a thin epitaxial buried layer of undoped semi-conductor material located between the two adjacent first layers. The buried layer forms a single mode optical channel having a width larger than a height thereof with the width equal to or greater than a width of a diffraction limited waveguide mode of the laser beam. Two thin epitaxial second layers of similarly and heavily doped semiconductor material are provided respectively adjacent the respective first layers of the same doping. One of these second layers is provided on a side of a semi-insulating substrate and two strip lines of opposite bias are provided on the side of the substrate and connect to a respective second layer of the same bias. The two adjacent first layers are preferably AlGaAs and the buried layer is preferably GaAs with a width less than about 5 microns and a height about 0.2 microns. |
| 公开日期 | 1992-02-25 |
| 申请日期 | 1990-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45843]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | UNITED STATES OF AMERICA, THE, REPRESENTED BY THE SECRETARY OF THE NAVY |
| 推荐引用方式 GB/T 7714 | SCIORTINO, JR., JOHN C.,RODE, DANIEL L.. Buried heterostructure laser modulator. US5091799. 1992-02-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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