中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates

文献类型:专利

作者RARING, JAMES W.; FEEZELL, DANIEL F.
发表日期2012-09-04
专利号US8259769
著作权人KAAI, INC.
国家美国
文献子类授权发明
其他题名Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates
英文摘要A laser diode device operable at a one or more wavelength ranges. The device has a first waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the first waveguide has a first gain characteristic and a first direction. In a specific embodiment, the first waveguide has a first end and a second end and a first length defined between the first end and the second end. The device has a second waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the second waveguide has a second gain characteristic and a second direction. In a specific embodiment, the second waveguide has a first end, a second end, and a second length defined between the first end and the second end. In a specific embodiment, the second waveguide has the first end being coupled to the first end of the first waveguide. The second length is in a different direction from the second length. In a specific embodiment, the device has a cleaved region provided on the second end of the second waveguide, the cleaved region being perpendicular to the second direction of the second waveguide.
公开日期2012-09-04
申请日期2009-07-13
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/45844]  
专题半导体激光器专利数据库
作者单位KAAI, INC.
推荐引用方式
GB/T 7714
RARING, JAMES W.,FEEZELL, DANIEL F.. Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates. US8259769. 2012-09-04.

入库方式: OAI收割

来源:西安光学精密机械研究所

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