Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates
文献类型:专利
作者 | RARING, JAMES W.; FEEZELL, DANIEL F. |
发表日期 | 2012-09-04 |
专利号 | US8259769 |
著作权人 | KAAI, INC. |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates |
英文摘要 | A laser diode device operable at a one or more wavelength ranges. The device has a first waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the first waveguide has a first gain characteristic and a first direction. In a specific embodiment, the first waveguide has a first end and a second end and a first length defined between the first end and the second end. The device has a second waveguide provided on a non-polar or semipolar crystal plane of gallium containing material. In a specific embodiment, the second waveguide has a second gain characteristic and a second direction. In a specific embodiment, the second waveguide has a first end, a second end, and a second length defined between the first end and the second end. In a specific embodiment, the second waveguide has the first end being coupled to the first end of the first waveguide. The second length is in a different direction from the second length. In a specific embodiment, the device has a cleaved region provided on the second end of the second waveguide, the cleaved region being perpendicular to the second direction of the second waveguide. |
公开日期 | 2012-09-04 |
申请日期 | 2009-07-13 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/45844] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | KAAI, INC. |
推荐引用方式 GB/T 7714 | RARING, JAMES W.,FEEZELL, DANIEL F.. Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates. US8259769. 2012-09-04. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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