Werkwijze voor het vervaardigen van een halfgeleiderlaser.
文献类型：专利
| 作者 | TAE KYUNG YOO; JONG SEOK KIM |
| 发表日期 | 2002-07-02 |
| 专利号 | NL194568C |
| 著作权人 | GOLDSTAR CO., LTD. |
| 国家 | 荷兰 |
| 文献子类 | 授权发明 |
| 其他题名 | Werkwijze voor het vervaardigen van een halfgeleiderlaser. |
| 英文摘要 | A semiconductor laser capable of minimizing generation of defects at the interface between grown layers, and a method for fabricating the same. The semiconductor laser is fabricated by forming an n type buffer layer over an n typesemiconductor substrate, forming a first n type clad layer over the buffer layer, forming an active layer over the first clad layer, sequentially growing a first p type clad layer, an etch stop layer, a second p type clad layer, a p type current injection layer, a first p type evaporation-preventing layer and a second p type evaporation-preventing layer, thereby forming a second clad layer, etching the second clad layer, thereby forming a mesa-shaped ridge portion, forming a current shield layer over a portion of the second clad layer exposed upon the etching, etching a portion of the current shield layer disposed over the mesa-shaped ridge portion, thereby forming a current injection region, and exposing a portion of the second evaporation-preventing layer disposed in the current injection region, etching the exposed portion of the second evaporation-preventing layer, thereby exposing a portion of the first evaporation-preventing layer disposed beneath the exposed portion of the second evaporation-preventing layer, and forming a p type cap layer over the entire exposed surface of the resulting structure. |
| 公开日期 | 2002-07-02 |
| 申请日期 | 1994-10-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45852]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | GOLDSTAR CO., LTD. |
| 推荐引用方式 GB/T 7714 | TAE KYUNG YOO,JONG SEOK KIM. Werkwijze voor het vervaardigen van een halfgeleiderlaser.. NL194568C. 2002-07-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。